PART |
Description |
Maker |
K4N51163QC-ZC25 K4N51163QC-ZC36 K4N51163QC-ZC33 K4 |
; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes 512MB的GDDR2 SDRAM 512Mbit gDDR2 SDRAM
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http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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HYB25D512800AT-6 HYB25D512160AT-6 HYB25D512160AT H |
512Mbit Double Data Rate SDRAM
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INFINEON[Infineon Technologies AG]
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HYB25D512800AT-7F |
512Mbit Double Data Rate SDRAM
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Infineon Technologies A...
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H5MS5122DFR H5MS5132DFR |
Mobile DDR SDRAM 512Mbit (16M x 32bit)
|
Hynix Semiconductor
|
M65KA512AB8W3 M65KA512AB |
512Mbit (4 Banks x 8M x 16), 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM
|
STMICROELECTRONICS[STMicroelectronics]
|
MD4331-DXX |
Mobile DiskOnChip G3 512Mbit/1Gbit Flash Disk
|
M-Systems
|
EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM 300MHz 2.8V 4M x 32 DDR SDRAM 333MHz 2.8V 4M x 32 DDR SDRAM 350MHz 2.8V 4M x 32 DDR SDRAM 4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
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ETRON[Etron Technology, Inc.] Etron Technology Inc. ETRON[Etron Technology Inc.]
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IBM0364404CT3C-75A IBM03644B4CT3C-75A IBM0364404CT |
x8 SDRAM x16 SDRAM x4 SDRAM Module x4内存模块
|
Ecliptek, Corp.
|
HB52R1289E22 HB52R1289E22-A6B HB52R1289E22-B6B |
1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M ??4 Components) PC100 SDRAM 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 4 Components) PC100 SDRAM 1 GB的注册SDRAM的内 GB的注册SDRAM的内存(364 M组件)PC100的SDRAM内存 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M × 4 Components) PC100 SDRAM
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ELPIDA MEMORY INC Elpida Memory, Inc.
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HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT- |
DDR SDRAM - 256Mb 256M-P DDR SDRAM IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC
|
Hynix Semiconductor http://
|
K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187 ; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No 128Mb SDRAM, 3.3V, LVTTL, 166MHz 128Mb SDRAM, 3.3V, LVTTL, 183MHz
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
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